40 V GaN FET Efficient Power Conversion Launches Gen 7 eGaN into Series Production

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EPC - Efficient Power Conversion Corporation

GGB Heilbronn GmbH

A new GaN power transistor shows how low switch-on resistance, low gate charge and good thermal performance can be consistently combined for the first time. This has a direct impact on the design of compact DC-DC converters and modern power supply units.

With the EPC2366, Efficient Power Conversion (EPC) is bringing the first power transistor of its seventh eGaN generation into mass production. The component addresses the 40 V range and is therefore aimed precisely at those architectures in which power density is crucial today: synchronous rectification, high-density DC-DC converters, power supplies for AI servers and compact motor drives. According to the manufacturer, the transistor achieves up to three times better performance in these applications than comparable silicon MOSFETs.

A technological leap that can be seen in the interaction

The progress of this generation cannot be measured by a single key figure. The decisive factor is the interplay of very low R_DS(on), low gate charge and a strikingly good thermal connection. With a typical R_DS(on) of 0.84 mΩ and an R_DS(on) × Q_G value of less than 12 mΩ-nC, the EPC2366 reduces conduction and switching losses at the same time. This conflict of objectives has been known for years with silicon: Those who lower the on-resistance usually pay with higher gate charge. GaN shifts this limit - Gen 7 clearly visible.

The transistor is designed for drain-source voltages of up to 40 volts, tolerates transients of up to 48 V and allows high continuous and pulse currents. This makes it ideal for modern low-voltage rails, which dominate in servers, data centers and high-performance embedded systems.

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Thermals as the key to real power density

The housing is at least as relevant as the electrical characteristics. The EPC2366 is housed in a PQFN package measuring just 3.3 mm × 2.6 mm with a thermal resistance of just 0.6 °C/W from the chip to the housing. In practice, this is often the limiting factor: it is not the maximum current specifications that are decisive, but how quickly the resulting power loss comes out of the component.

Especially in AI server power supplies and high-density point-of-load converters, currents are increasing while the available surface area is decreasing. This is where thermals become a bottleneck - and this is exactly where the EPC2366 comes in.

Reference design instead of layout risk

In parallel to the transistor, EPC offers the EPC90167, a half-bridge evaluation board that integrates two of these components in a low-parasitic layout. For developers, this is more than just a demo board. With GaN in particular, the PCB layout determines switching behavior, losses and EMC. A clean reference design saves time here and reduces the risk of giving away the advantages of the technology due to layout errors.

Platform strategy instead of individual components

EPC does not see the EPC2366 as a stand-alone product, but as the start of a broader Gen 7 platform. According to CEO and co-founder Alex Lidow, 25-volt and 15-volt variants of this generation are already being sampled. Further products are set to go into series production in the first half of 2026. This indicates that EPC intends to roll out its new technology across several voltage ranges.

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Availability and classification

The EPC2366 is currently in series production. For developers looking for a replacement for existing silicon MOSFETs, EPC also provides a cross-reference tool in its "GaN Power Bench", which suggests suitable GaN alternatives based on real operating parameters.

Why Gen 7 is more than just an incremental update

With the seventh generation of eGaN, one trend is becoming clear: GaN is not only becoming faster and less lossy, but also increasingly easier to control thermally. For developers, this means higher switching frequencies, smaller inductive components, better efficiency and greater power density. (mr)