GaN Gate Drivers for Space Power Efficiency and Radiation Resilience in Satellite Systems

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Texas Instruments

Fastems Systems GmbH

item Industrietechnik GmbH

Modern satellite systems are becoming increasingly complex. As a result, the need for efficient and space-saving power supply solutions for applications in space is growing. New GaN FET gate drivers enable compact, high-performance power management. This optimizes size, weight and energy efficiency.

Satellites have to cope with a variety of tasks. From high-resolution earth observations to global data transmissions. This naturally also increases the power requirements, as the sensor technology and data processing become ever more sophisticated. Compact and highly efficient power supplies are therefore essential. In addition to GaN FETs, GaN FET gate drivers that offer precise control with short switching times are also required. This enables improved utilization of the energy generated by solar cells, which directly influences the operating efficiency of the satellites.

There are many challenges to consider when using semiconductors in space. One of the most important is exposure to radiation. Electronic components can be damaged or their function disrupted by high-energy particles from cosmic radiation or the sun. For this reason, semiconductors must be either radiation-tolerant or radiation-hardened.

Two major radiation effects are the Total Ionizing Dose (TID) and the Single Event Effects (SEE). In the case of a TID, long-term exposure to radiation causes a change in the electrical properties of a semiconductor. SEEs, on the other hand, can trigger switching processes in the semiconductor through individual particles or cause permanent damage.

In addition to radiation, semiconductors also have to withstand extreme temperature fluctuations. Although it is often pleasantly cool in space, which makes overheating rare (-200 °C), temperatures of over 150 °C can also occur. Special cooling mechanisms or heat-resistant housing materials are required to withstand such conditions. The components must also be able to withstand mechanical loads. In addition to constant temperature expansion, intensive vibrations and acceleration forces occur during rocket launches. To overcome these challenges, semiconductors for space applications are often used in hermetically sealed housings. These protect them from mechanical stress and environmental influences. The choice of material is therefore crucial. Housing materials with a high density and high atomic number are required to protect against radiation.

Long-term reliability is also a key factor. As satellites and space probes are often operated for years or decades without the possibility of maintenance, semiconductors must have a very low failure rate. Components qualified for use in space meet strict standards such as QML-V (Qualified Manufacturers List) or Space Enhanced Plastic (SEP). These guarantee a long service life. The power supply in space is usually provided by solar energy. Highly efficient semiconductors are required to make optimum use of the limited energy in these cells. Modern technologies such as gallium nitride (GaN) or silicon carbide (SiC) are the first choice here.

SWaP optimization for satellites

The reduction of size, weight and power (SWaP) is a decisive factor for modern space missions. GaN technology contributes to increasing efficiency and reducing mass and offers the following advantages:

• Higher performance and improved energy conversion

• Extended mission life due to reduced thermal load

• More compact construction for space-saving designs

• Less cooling effort due to reduced power loss

• Versatile application possibilities

The new gate driver family from Texas Instruments is optimized for different voltage levels and covers a wide range of applications in the satellite power network:

• 200V variant for drive systems and the primary power conversion of solar panels

• 60V and 22V versions for distribution and conversion tasks within the satellite

The radiation-resistant and radiation-tolerant variants make the components suitable for long-term use in low, medium and geostationary orbits. (mr)

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