Advanced semiconductors Ferroelectric Memory Secures Data Quickly and Energy-Efficiently

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Researchers from Fraunhofer IPMS and GlobalFoundries have successfully integrated ultra-fast ferroelectric memory into an industrial semiconductor process, paving the way for energy-efficient electronics, edge AI and next-generation computing architectures.

Saving energy, computing faster and storing data permanently: Scientists at the Fraunhofer Institute for Photonic Microsystems IPMS, together with GlobalFoundries, have developed a novel memory technology that fulfils exactly these requirements. The team has succeeded in integrating ultra-fast ferroelectric FRAM memory based on hafnium oxide into an existing industrial manufacturing technology. For this achievement, the researchers have been awarded the Stifterverband's "Research in Cooperation" science prize.

Digital systems place ever greater demands on memory technologies. They must be fast, durable, non-volatile and extremely energy-efficient at the same time. Existing memory solutions are increasingly reaching their limits, particularly in automotive, industrial automation and medical technology applications. As part of a joint research project, Fraunhofer IPMS and GlobalFoundries addressed this challenge. Dr Franz Müller, Dr Maximilian Lederer, Dr Nandakishor Yadav and Konrad Seidel, together with Dr Sven Beyer and Dr Robert Seidel, established a novel memory technology that enables energy-efficient electronics and new computing architectures.

Ferroelectric memory for permanent data retention

At the centre of the work is a ferroelectric random access memory (FRAM) that uses the ferroelectric material hafnium oxide to store information permanently. "With ferroelectric memory technology, ions are shifted very quickly within a crystal lattice, resulting in a change in polarisation. This effect can be used to store information," explains Konrad Seidel, Head of the Emerging Memory Solutions business unit at Fraunhofer IPMS. The major advantage of this approach is that information remains stored even without power and can be read out repeatedly without being lost.

Integration into industrial chip manufacturing

A key success of the project is the integration of the memory technology into an existing industrial manufacturing process. The researchers developed a reproducible approach for embedding ferroelectric FRAM cells into GlobalFoundries' 22FDX® technology node, a platform specifically designed for the production of ultra-low-power microchips.

"It is a major step forward when you can demonstrate that intensive research can actually be manufactured on highly scaled industrial structures," says Dr Franz Müller, project manager at Fraunhofer IPMS.

The novel memory cells operate at energy-saving voltages below one volt, switch within a few nanoseconds and offer high endurance, meaning they can reliably withstand a large number of write and erase cycles.

Foundation for edge AI and new applications

The new memory technology is particularly relevant for applications where energy efficiency is critical, such as autonomous sensors, battery-powered systems and artificial intelligence running directly on devices.

"Power consumption is significantly lower with our non-volatile memory technology than with existing solutions. This makes it possible to deploy artificial intelligence not only in data centres but directly in edge applications, where data is processed locally on the device," explains Dr Maximilian Lederer, Lead Scientist at Fraunhofer IPMS.

From an industry perspective, this advancement is highly significant.

"An affordable ultra-low-power technology combined with an ideally suited memory solution is extremely attractive for applications such as edge AI. These are two technologies that complement each other perfectly," emphasises Dr Sven Beyer of GlobalFoundries.

Collaborative research as a success factor

The project builds on many years of close cooperation between Fraunhofer IPMS and GlobalFoundries at the Dresden (Germany) site. Materials, processes, devices and manufacturing technologies were jointly developed within the Silicon Saxony innovation ecosystem.

"The open and trusting collaboration between industry and research provided the foundation for rapidly transferring our innovation into a realistic application scenario," says Konrad Seidel.

The technology, which was brought rapidly towards market readiness through combined efforts, creates an important foundation for powerful, robust and energy-efficient electronic systems of the next generation. At the same time, it strengthens Germany's competitiveness in the highly contested global market for semiconductor manufacturing technologies.